IGBT GD150HFY120C1S

IGBT GD150HFY120C1S

• Half Brigde
• Transistor Polarity: Dual N Channel
• DC Collector Current: 230A
• Emitter Voltage: 2V
• Power Dissipation Pd: 746W
• Collector Emitter Voltage V(br) ceo: 1.2KV
• Working Temperature Max: 150°C 
• No. Pin: 7
• IGBT Technology: Trench Field Stop
• IGBT Termination: Stud
• Case Type: Module

Maker: StarPower

Contact and order (24/7)

LECI Co., Ltd
R-1901, Saigon Trade Center Bld, 37 Ton Duc Thang Str., Ben Nghe W., Dist. 1, HCM City 70000, VN.
T: +842822202988 | F: +8428222 02989

Hotline: (+84) 0901442689 (Zalo, Whatsapp)
Website: www.lecitubes.com