IGBT GD150HFY120C1S

Describe

IGBT GD150HFY120C1S

  • Half Brigde
  • Transistor Polarity: Dual N Channel
  • DC Collector Current: 230A
  • Emitter Voltage: 2V
  • Power Dissipation Pd: 746W
  • Collector Emitter Voltage V(br) ceo: 1.2KV
  • Working Temperature Max: 150°C 
  • No. Pin: 7
  • IGBT Technology: Trench Field Stop
  • IGBT Termination: Stud
  • Case Type: Module

Maker: StarPower

Contact and order (24/7)

LECI Co., Ltd
R-1901, Saigon Trade Center Bld, 37 Ton Duc Thang Str., Ben Nghe W., Dist. 1, HCM City 70000, VN.
T: +842822202988 | F: +8428222 02989

Hotline: (+84) 0901442689 (Zalo, Whatsapp)
Website: www.lecitubes.com

 

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